Page History
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Affected Product | Changes | Replacement |
|---|---|---|
| TE0818-01- | ||
| 9BE21- | ||
| AZ | #1... | |
| #12 | TE0818-02- | |
| 9BE81-A | ||
| TE0818-01- | ||
| BBE21- | ||
| AZ | #1... | |
| #12 | TE0818-02- | |
| BBE81-A | ||
| TE0818-01-9BE216BE21-AZA | #1#2...#11#12 | TE0818-02-9BE816BE81-A |
| TE0818-01-9GI219BE21-A | #1#2...#11#12 | TE0818-02-9GI819BE81-A |
| TE0818-01-9GI21-AKA | #1#2...#11#12 | TE0818-02-9GI81-AKA |
| TE0818-01-9GI21-ASAK | #1#2...#11#12 | TE0818-02-9GI81-ASAK |
| TE0818-01-BBE219GI21-AAS | #1#2...#11#12 | TE0818-02-BBE819GI81-AAS |
| TE0818-01-BBE21-AZA | #1#2...#11#12 | TE0818-02-BBE81-A |
| TE0818-01-BGI21-A | #1#2...#11#12 | TE0818-02-BGI81-A |
| TE0818-01-9GI81-A | #2#3...#11#12 | TE0818-02-9GI81-A |
| TE0818-01-9GI81-AK | #2#3...#11#12 | TE0818-02-9GI81-AK |
| TE0818-01-BBE81-A | #2#3...#11#12 | TE0818-02-BBE81-A |
| TE0818-01-BBE81-AK | #2#3...#11#12 | TE0818-02-BBE81-AK |
Changes
#1 Changed DCDC (U15, U20, U21, U22, U23, U24, U29, U30, U31, U35, U36, U38, U45) from MUN3CAD03-SE to TPS82085SIL and adapted voltage divider resistors.
Type: BOM Change
Reason: TPS82085SIL availability.
Impact: Minor changes in electrical characteristics.
#2 Changed DDR4 SDRAM (U2, U3, U9, U12) from K4A8G165WB-BIRC to K4A8G165WC-BITDTCV.
Type: BOM change
Reason: BOM Optimization.
Impact: Memory design settings needs to be reviewed by customer.
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#3 Added defaultly used external compensation network (R119, C190, C191) and option (R118) to use internal compensation for DCDCs (U18, U37).
Type: Schematic Change
Reason: Improve stability.
Impact: None. Improved stability.
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#4 Added 470 nF capacitors (C178, C187, C188, C189) to improve VTT net.
Type: Schematic Change
Reason: VTT decoupling improvement.
Impact: Improved VTT voltage rail reliabililty.
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#5 Added diode (D2) between U41 pin 3 net MR and voltage rail 3.3VIN.
Type: Schematic Change
Reason: Protect manual reset pin.
Impact: None.
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#6 Enabled DDR4 test usage via connecting all DDR4 TEN pins together, pulled them down with resistor (R120) and added testpoint (TP23).
Type: Schematic Change
Reason: Enable DDR4 test improvement.
Impact: None.
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#7 Added testpoints (TP25, TP27, TP29, TP35, TP37...TP79).
Type: Schematic Change
Reason: Improve voltage measuring possibilities.
Impact: None.
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#8 Changed capacitor (C112) size from 0402 to 0201 and voltage rating from 16 V to 10 V.
Type: Schematic Change
Reason: BOM Optimization.
Impact: None.
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#9 Changed ferrid beads (L1, L2, L3, L4, L5, L7) from MPZ0603S121HT000 to BLM15PX800SZ1D.
Type: Schematic Change
Reason: BOM Optimization.
Impact: None.
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#10 Changed ferrid beads (L6, L8) from MPZ1608S221A to BLM15PX800SZ1D.
Type: Schematic Change
Reason: BOM Optimization.
Impact: None.
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#11 Changed signal trace lengths.
Type: PCB Change
Reason: Result of changes above.
Impact: Changed trace length have to be taken into account in existing designs. The trace length for new revision will be available in TE081x series pinout generator. Please check if change in trace length still matches your requirements. Adaption of carrier may be necessary.
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#12 Updated documentation overviews.
Type: Documentation Update
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Overview
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