Page History
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Affected Product | Replacement |
|---|---|
| TE0630-02I | TE0630-03-52I12-A |
| TE0630-02IBF | TE0630-03-63I12-A |
| TE0630-02IV | TE0630-03-82I12-A |
| TE0630-02-52C12-A | TE0630-03-52C12-A ??? should be S-Variant |
| TE0630-02B-DWS | - |
| TE0630-02IBFC1 | - |
| TE0630-02IV-DWS | - |
| TE0630-02-52C12-A | - |
Changes
#1 DDR3 SDRAM Memory ????? (Dependent on table)
Type: Schematic Change
Reason: EOL of Component.
Impact: None. Increased current output capability. Minor changes in electrical characteristics.
#1 Changed DCDC EN6347QI (U7) to MPM3860GQW-Z and adapted power circuit.
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Impact: If hardware coding of board revision is used in design, update is needed.
#5 Board variant coding updated to REV03 variants via pull-down resistor options (R74, R76, R77, R78).
Type: Schematic Change
Reason: New revision.
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#9 Changed 22 µF capacitor (C77, C80) from 6.3 V to 10 V.
Type: Schematic Change
Reason: BOM Optimization.
Impact: None.
#9 Changed 4.7 µF capacitor (C108) from 10 %, 0603 to 20 %, 0402.
Type: Schematic Change
Reason: BOM Optimization.
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Reason: Use standard fiducials.
Impact: None.
#12 Removed not needed testpoints (TP2, TP3, TP7, TP10, TP13, TP14, TP15
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, TP30, TP31, TP32).
Type: Schematic Change
Reason: Testpoints not needed.
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Reason: Improve signal integrity.
Impact: None.
#14
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Changed net connection for testpoints (TP27, TP28).
Type: Schematic Change
Reason: Enable Optimize signal monitoring.
Impact: None.
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Overview
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