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CompanyTrenz Electronic GmbH
PCN NumberPCN-20230920
TitleTE0818-01 to TE0818-02 Hardware Revision Change
SubjectHardware Revision Change
Issue Date

2023-1110-0104

Products Affected

This change affects all Trenz Electronic TE0818 SoMs: TE0818-01*.

Affected Product

Changes

Replacement
TE0818-01-
6BE21
9BE21-
A
AZ#1...
#11
#12TE0818-02-
6BE81
9BE81-A
TE0818-01-
9BE21
BBE21-
A
AZ#1...
#11
#12TE0818-02-
9BE81
BBE81-A
TE0818-01-
9BE21
6BE21-
AZ
A
#1
#2...
#11
#12TE0818-02-
9BE81
6BE81-A
TE0818-01-
9GI21
9BE21-A
#1
#2...
#11
#12TE0818-02-
9GI81
9BE81-A
TE0818-01-9GI21-
AK
A
#1
#2...
#11
#12TE0818-02-9GI81-
AK
A
TE0818-01-9GI21-
AS
AK
#1
#2...
#11
#12TE0818-02-9GI81-
AS
AK
TE0818-01-
BBE21
9GI21-
A
AS
#1
#2...
#11
#12TE0818-02-
BBE81
9GI81-
A
AS
TE0818-01-BBE21-
AZ
A
#1
#2...
#11
#12TE0818-02-BBE81-A
TE0818-01-BGI21-A
#1
#2...
#11
#12TE0818-02-BGI81-A
TE0818-01-9GI81-A
#1
#3...
#11
#12TE0818-02-9GI81-A
TE0818-01-9GI81-AK
#2
#3...
#11
#12TE0818-02-9GI81-AK
TE0818-01-BBE81-A
#2
#3...
#11
#12TE0818-02-BBE81-A
TE0818-01-BBE81-AK
#2
#3...
#11
#12TE0818-02-BBE81-AK


Changes

#1 Changed DCDC (U15, U20, U21, U22, U23, U24, U29, U30, U31, U35, U36, U38, U45) from MUN3CAD03-SE to TPS82085SIL and adapted voltage divider resistors.

Type: BOM Change

Reason: TPS82085SIL availability.

Impact: Minor changes in electrical characteristics.

#2 Changed DDR4 SDRAM (U2, U3, U9, U12) from K4A8G165WB-BIRC to K4A8G165WC-BITDTCV.

Type: BOM change

Reason: BOM Optimization.

Impact: Memory design settings   New DDR timing needs to be considered in customer design. Firmware reflects it but custom firmware needs to be reviewed updated by customer.

...

#3 Added

...

default used external compensation network (R119, C190, C191) and option (R118) to use internal compensation for DCDCs (U18, U37).

Type: Schematic Change

Reason: Improve stability.

Impact: None. Improved stability.

...

#4 Added 470 nF capacitors (C178, C187, C188, C189

...

) to improve VTT net.

Type: Schematic Change

Reason: VTT decoupling improvement.

Impact: Improved VTT voltage rail reliabililty.

...

#5 Added diode (D2) between U41 pin 3 net MR and voltage rail 3.3VIN.

Type: Schematic Change

Reason: Protect manual reset pin.

Impact: None.

...

#6 Enabled DDR4 test usage via connecting all DDR4 TEN pins together, pulled them down with resistor (R120) and added testpoint (TP23).

Type: Schematic Change

Reason: Enable DDR4 test improvement.

Impact: None.

...

#7 Added testpoints (TP25, TP27, TP29, TP35, TP37...TP79).

Type: Schematic Change

Reason: Improve voltage measuring possibilities.

Impact: None.

...

#8 Changed capacitor (C112) size from 0402 to 0201 and voltage rating from 16 V to 10 V.

Type: Schematic Change

Reason: BOM Optimization.

Impact: None.

...

#9 Changed ferrid beads

...

(L1, L2, L3, L4, L5,

...

L7) from MPZ0603S121HT000 to BLM15PX800SZ1D.

Type: Schematic Change

Reason: BOM Optimization.

Impact: None.

...

#10 Changed ferrid beads (L6, L8) from MPZ1608S221A to BLM15PX800SZ1D

...

.

Type: Schematic Change

Reason: BOM Optimization.

Impact: None.

...

#11 Changed signal trace lengths.

Type: PCB Change

Reason:Changing trace length are the result of above done changes Result of changes above.

Impact: Check whether new trace length fits your baseboard requirements.

...

Changed trace length have to be taken into account in existing designs. The trace length for new revision will be available in TE081x series pinout generator. Please check if change in trace length still matches your requirements. Adaption of carrier may be necessary.

#12 Updated documentation overviews.

Type: Documentation Update

...