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  1. 512 MByte DDR3 SDRAM, Cypress DDR3 Memory, U1
  2. Xilinx Automotive XA7Z020-1CLG484Q ,U2
  3. 100 MBit Ethernet transceiver  DP83848MPHPEPDP83848, U3
  4. 3.5V to 60V step-down converter, Texas Instruments TPS54260-Q1, U4
  5. Standard Clock Oscillators Oscillators @ 25MHz 3.3V, SiTime SiT1618xxSiT1618AA, U5
  6. 1.5 A Low Dropout Linear Regulator, Texas Instruments, TPS74801QRGWRQ1TPS74801-Q1, U6
  7. Real Time Clock, Micro Crystal RV-3029-C3, U7
  8. 3.5V to 60V step-down converter, Texas Instruments TPS54260-Q1, U8
  9. 3.5V to 60V step-down converter, Texas Instruments TPS54260-Q1, U9
  10. 100 MBit Ethernet transceiver  DP83848MPHPEP, U10
  11. 64 Kbit I2C EEPROM,   24AA64/ 24LC64/ 24FC64,(24xx64), U11
  12. Low-Quiescent-Current Priggrammable Delay Supervisory Circuit, Texas Instruments TPS3808GxxTPS3808G01-Q1, U12
  13. 16 MByte QSPI Nor Flash memory, Cypress S25FL127, U13
  14. Standard Clock Oscillators Oscillators @ 50MHz 3.3V, SiTime SiT8918xxSiT8918AA, U14
  15. Low-Quiescent-Current Priggrammable Delay Supervisory Circuit, Texas Instruments TPS3808GxxTPS3808G01-Q1, U15
  16. CAN Tranceiver, Texas Instruments SN65HVD230Q, U16

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Chip/InterfaceICPS7 Peripheral
SPI FlashS25FL127SABMFV10QSPI016 MByte Flash
I2C EEPROM24xx6424LC64I2C08 KByte EEPROM
RTC I2CRV-3029I2C0
RTC InterruptRV-3029GPIO - MIO0
User LEDLED GreenGPIO - MIO7

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The Microchip Technology Inc. 24AA64/24LC64/ 24FC64 (24XX64*) is 24LC64 is a 64 Kbit Electrically Erasable PROM. The device is organized as a single block of 8K x 8-bit memory with a 2-wire serial interface. Lowvoltage design permits operation down to 1.7V, with standby and active currents of only 1 μA and 3 mA, respectively. It has been developed for advanced, lowpower applications such as personal communications or data acquisition. The 24XX64 24LC64 also has a page write capability for up to 32 bytes of data. Functional address lines allow up to eight devices on the same bus, for up to 512 Kbits address space.

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Low Quiescent Current Programmable Delay Supervisory Circuit

The TPS3808GxxTPS3808G01-Q1 microprocessor supervisory circuits monitor system voltages from 0.4 V to 5 V, asserting an open-drain RESET signal when the SENSE voltage drops below a preset threshold or when the manual reset (MR) pin drops to a logic low. The RESET output remains low for the useradjustable delay time after the SENSE voltage and MR return above their thresholds. Datasheet is available in Texas Instruments website.

The TPS3808GxxTPS3808G01-Q1 device uses a precision reference to achieve 0.5% threshold accuracy for VIT ≤ 3.3 V. The reset delay time can be set to 20 ms by disconnecting the CT pin, 300 ms by connecting the CT pin to VDD using a resistor, or can be useradjusted from 1.25 ms to 10 s by connecting the CT pin to an external capacitor. The TPS3808GxxTPS3808G01-Q1 has a very low typical quiescent current of 2.4 μA, so it is well suited for battery-powered applications. 

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Power Rail Name

B2B Connector

JM1 Pin

B2B Connector

JM2 Pin

B2B Connector

JM3 Pin

DirectionNotes
VIN1,3--Input


VMIO-2-I/O
3.3V19425,57Output

1.8V

-5-Output


Bank Voltages

Bank          

Schematic Name

Voltage

Notes
500VCCO_MIO0_5003.3V
501
VMIO,

VCCO_MIO1_500

3.3V
502VCCO_DDR_5021.5V
13 HRVCCO_13 3.3VSupplied by the carrier board. JM1
33 HRVCCO_333.3VSupplied by carrier board. JM3
34 HRVCCO_343.3V


35 HRVCCO_353.3V

Supplied by the carrier board. JM2,JM3

Board to Board Connectors

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SymbolsDescriptionMinMaxUnit
VCCPINTPS internal logic supply voltage0.951.05V
VCCPAUXPS auxiliary supply voltage1.711.89V
VCCPLLPS PLL supply1.711.89V
VCCO_DDRPS DDR I/O supply voltage1.141.89V
VCCO_MIO0PS MIO I/O supply voltage for MIO banks1.713.45V
VCCO_MIO1PS MIO I/O supply voltage for MIO banks1.713.45V



ParameterMinMaxUnitsReference Document
VIN supply voltage3.560VTPS54260-Q1 datasheets.
Supply voltage for PS MIO banks1.713.465VSee Xilinx DS187 datasheet.
I/O input voltage for PS MIO banks-0.2VCCO_MIO + 0.20VSee Xilinx DS187 datasheet.
Supply voltage for PS DDR1.141.89VSee Xilinx DS187 datasheet.
I/O input voltage for PS DDR-0.20VCCO_DDR + 0.20VSee Xilinx DS187 datasheet.
Supply voltage for HR I/Os banks1.143.465VSee Xilinx DS187 datasheet.
I/O input voltage for HR I/O banks-0.20VCCIO + 0.20VSee Xilinx DS187 datasheet.

Physical Dimensions

Scroll Title
anchorFigure_TS_PD
titlePhysical dimensions drawing

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