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This change affects all Trenz Electronic TE0820 SoMs of Revision 04: TE0820-04*.

Affected Product

Replacement
TE0820-04-2AE21MATE0820-05-2AE21MA
TE0820-04-2AE21MAZTE0820-05-2AE21MAZ
TE0820-04-2AI21MATE0820-05-2AI21MA
TE0820-04-2AI21MAZTE0820-05-2AI21MAZ
TE0820-04-2AI21MCTE0820-05-2AI21MC
TE0820-04-2AI21MCZTE0820-05-2AI21MCZ
TE0820-04-2BE21MATE0820-05-2BE21MA
TE0820-04-2BE21MAJTE0820-05-2BE21MAJ
TE0820-04-2BE21MAZTE0820-05-2BE21MAZ
TE0820-04-2BE21MLTE0820-05-2BE21ML
TE0820-04-2BE21MLZTE0820-05-2BE21MLZ
TE0820-04-2BI21MATE0820-05-2BI21MA
TE0820-04-2BI21MAZTE0820-05-2BI21MAZ
TE0820-04-2BI21MLTE0820-05-2BI21ML
TE0820-04-2BI21MLZTE0820-05-2BI21MLZ
TE0820-04-3AE21MATE0820-05-3AE21MA
TE0820-04-3AE21MAZTE0820-05-3AE21MAZ
TE0820-04-3BE21MATE0820-05-3BE21MA
TE0820-04-3BE21MAZTE0820-05-3BE21MAZ
TE0820-04-3BE21MLTE0820-05-3BE21ML
TE0820-04-3BE21MLZTE0820-05-3BE21MLZ
TE0820-04-3BI21MLTE0820-05-3BI21ML
TE0820-04-3BI21MLZTE0820-05-3BI21MLZ
TE0820-04-4AE21MATE0820-05-4AE21MA
TE0820-04-4AE21MAZTE0820-05-4AE21MAZ
TE0820-04-4AI21MCTE0820-05-4AI21MC
TE0820-04-4AI21MCZTE0820-05-4AI21MCZ
TE0820-04-4AI21MITE0820-05-4AI21MI
TE0820-04-4BI21PLTE0820-05-4BI21PL
TE0820-04-4BI21PLZTE0820-05-4BI21PLZ
TE0820-04-4DE21MATE0820-05-4DE21MA
TE0820-04-4DE21MAZTE0820-05-4DE21MAZ
TE0820-04-4DI21MATE0820-05-4DI21MA
TE0820-04-4DI21MAZTE0820-05-4DI21MAZ
TE0820-04-5DI21MATE0820-05-5DI21MA
TE0820-04-5DI21MAZTE0820-05-5DI21MAZ
TE0820-04-5DR21MATE0820-05-5DR21MA
TE0820-04-5DR21MAZTE0820-05-5DR21MAZ
TE0820-04-S002C1TE0820-05-S002C1

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Type: Schematic Change

Reason: BOM OptimizationEOL of Component

Impact: None. Minor changes in electrical characteristics.

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Type: Schematic Change

Reason: BOM OptimizationEOL of Component

Impact: None. Minor changes in electrical characteristics.

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Type: Schematic Change

Reason: Follow Updated decoupling capacitor structure to Xilinx recommendations.

Impact: None. Minor changes in electrical characteristics.

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Type: Schematic Change

Reason: Allow extended automatic DDR4 testing.

Impact: None.

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Reason: Power management improvement.

Impact: None. All power supplies are monitored.

#8 Changed SiT8008AI-73-XXS-52.000000E to SiT8008BI-73-XXS-52.000000E for U14.

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Impact: Changed reset and power-up handling. Please, verify that the module meets your requierements.

#10 Added voltage level translator U29 and resistor R129 as assembly option to connect signal "PHY_LED1" to SoC.

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Reason: Connect both PHY signals to SoC.

Impact: None. Signal optional available at SoC (assembly option).

#11 Added resistors R130 and R131 to add pull-up/-down option for SoC "POR_OVERRIDE" signal.

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Reason: Improvement to allow "POR_OVERRIDE" state change.

Impact: None. Assembly option with power override possible.

#12 Added diode D5 to protect manual reset input signal.

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Type: Schematic Change

Reason: Improve Change voltage threshold from 0.74 V to 0.775 V.

Impact: None.

#15 Added resistor R132 as assembly option.

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Reason: Added assembly option for DCI.

Impact: None. Not needed for x16 DDR4.

#16 Change R92 to not assembled.

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